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- CdSe單晶CdSe single crystal
- 這種方法采用波長(cháng)調制技術(shù),能夠比較精確地測定半導體材料的帶隙能量,已應用于GaAs,GaP和CdSe單晶,并且用來(lái)測量GaAs襯底上外延層Al_xGa_(1-x)As單晶的合金組分x。By the use of wavelength-modulation technique, the band-gap energies of semiconducting materials can be determined more accurately by this method. The method has been applied to GaAs, GaP and CdSe monocrystalso In addition, the method has been applied to determination of the alloy composition x of thin Al_xGa_(1-x)As crystals epitaxially-grown on GaAs substrate.
- CdSecadmium selenide(CdSe)
- CdSe／CdSCdSe/CdS
- 單晶爐single crystal furnace
- CdSe/CdSCdSe/CdS
- TGS單晶TGS crystal
- CdSe／ZnSCdSe/ZnS
- YSZ單晶YSZ single crystal
- CdSe薄膜CdSe film
- 體單晶bulk crystal
- CdSe／PVKCdSe/PVK
- 超單晶superindividual
- 納米CdSenanocrystal CdSe
- 單晶 多晶柵single poly gate
- CdSe納米晶CdSe nanocrystals
- 蒽單晶anthracene single crystal
- CdSe量子點(diǎn)CdSe QDs
- 鉬單晶molybdenum single crystal
- CdSe單晶體CdSe sin gle crystal
