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- CZ-Si單晶CZ-Sicrystal
- p-Si單晶低表面復合速度的獲得Acquisition of Low Surface Recombination Velocity on Surface of p-type Si
- 采用Lange式透射X射線(xiàn)形貌照相法研究了電解充氫導致Fe-3wt-%Si單晶中氫損傷的規律。The formation and aggravation of hydrogen damage in Fe-3wt-%25Si alloy during cathodic charging were studied by means of Lange transmission X-ray topography.
- 本論文利用自主研發(fā)的Si電子束蒸發(fā)器和建立的分子束外延設備，在Si襯底上外延生長(cháng)出了表面平整的Si單晶薄膜。In this thesis, by using the Si electron beam evaporator (EBE) and UHV MBE system which are developed and set up by ourselves, a flat and crystalline Si epitaxial film has been obtained on Si substrate.
- 用6MeV F離子束輻照了淀積在Si單晶基底上的Sb、Ag、Cu、Pd和Ni金屬薄膜,并用膠帶法對不同輻照劑量的各點(diǎn)進(jìn)行了增強附著(zhù)閾劑量的測量。Sb, Ag, Cu, Pd and Ni films deposited on Si substrates were irradiated with 6 MeV F ions. The Scotch tape test was employed to measure adhesion changes as a function of dose.
- 單晶爐single crystal furnace
- TGS單晶TGS crystal
- YSZ單晶YSZ single crystal
- 體單晶bulk crystal
- 超單晶superindividual
- 單晶 多晶柵single poly gate
- 蒽單晶anthracene single crystal
- 鉬單晶molybdenum single crystal
- 單晶層single crystalline layer
- 單晶的monomorph
- 單晶錠single crystal ingot
- 單晶膜single crystal film
- 單晶片處理single wafer processing
- 單晶掐single crystal device
- 單晶絲monocrystalline wire
