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- 退火溫度對鐵電薄膜鈦酸鍶鋇的影響EFFECT OF ANNEALING TEMPERATURE ON FERROELECTRIC BARIUM STRONTIUM TITANATE THIN FILMS
- 采用PLC控制制備鐵電薄膜的液態(tài)源系統Controlling Liquid Source System with Ferroelectric Thin Film Preparation by Using PLC
- 電electricity
- 采用sol-gel工藝低溫制備了Si基Bi4?xLaxTi3O12(BLT)鐵電薄膜。Bi4?xLaxTi3O12 (BLT) thin films were prepared on p-Si substrates by using sol-gel method at low temperature.
- PZT鐵電薄膜PZT ferroelectric thin film
- BST鐵電薄膜壓控微波器件Voltage Controlled Microwave Electronic Components Using BST Ferroelectric Thin Films
- 用傳統固相燒結工藝,制備了純相的Bi4Ti3O12(BTO)陶瓷,A位摻雜的Bi3.25La0.75Ti3O12(BLT),Bi3.15Nd0.85Ti3O12(BNdT)鐵電陶瓷。Ferroelectric ceramics of Bi_4Ti_3O_(12)(BTO),Bi_(3.25)La_(0.75)Ti_3O_(12)(BLT),and Bi_(3.15)Nd_(0.85)Ti_3O_(12)(BNdT) were synthesized using the solid-state reaction method.
- PLZT鐵電薄膜PLZT ferroelectric thin films
- 鐵電陶瓷ferroelectric ceramics
- 鐵電滯后ferroelectric hysteresis
- 鐵電區[電] ferroelectric domain
- 鐵電BLTferroelectric BLT
- 鐵電BNTferroelectric BNT
- BDTV鐵電薄膜BDTV ferroelectric films
- BST鐵電薄膜ferroelectric thin film
- BYT鐵電薄膜BYT ferroelectric thin films
- BLT鐵電薄膜BLT ferroelectric thin film
- 鉍系鐵電薄膜Bi-system thin films
- 鐵電鐵磁薄膜biferroic film
- 鐵電陶瓷薄膜ferroelectric ceramics films