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- Some fundamental aspects of Auger electron spectroscopy have been reviewed. 介紹了俄歇電子譜術(shù)的某些基本問(wèn)題。
- Raman, Auger Electron Spectroscopy (AES) and X ray Photoelectron Spectroscopy (XPS) were used to analyze the samples. 用拉曼譜 (Raman)、俄歇電子能譜 (AES)以及X射線(xiàn)光電子能譜(XPS)等方法對樣品進(jìn)行研究。
- Survival analysis of C6 glioma DNA-targeting radio-therapy by Auger electron emitted from~(125)Iudr in rats. ~(125)IUdR對膠質(zhì)瘤細胞靶點(diǎn)放療后的大鼠生存分析
- GaAs-Al_xGa_(1-x)As heterostructure grown by liquid phase epitaxy (LPE) has beenstudied by Auger electron spectroscope. 采用俄歇電子能譜儀(AES)對液相外延生長(cháng)的GaAs-AlxGa_(1-x)As異質(zhì)結構進(jìn)行了研究.
- The Ge mole fraction of 15-16% was determined by Auger electron spectroscopy (AES). 俄歇電子譜(AES)測試表明，所制備的Si_(1-x)Ge_x中Ge含量約為15-16%25。
- The simulation of the Auger electron emissions in scanning probe electron energy spectrometer (SPEES) is reported. 報道了對掃描探針電子能譜儀（SPEES）中俄歇電子出射的理論模擬研究。
- The change of Si/Au interface at the Au-modified Si photoelectrode before and after potential sweep was studied with Auger Electron Spectroscopy (AES). 本文報道了用離子剝層俄歇能譜研究Au修飾Si光電極電位掃描前后Si/Au界面的變化。
- The experiments were performed by means of Secondary Ion Mass Spectroscopy (SIMS) and Auger Electron Spectroscopy (AES). 采用了二次離子質(zhì)譜儀(SIMS)和俄歇電子譜儀(AES)進(jìn)行表面分析。
- The interface diffusion phenomena of BTO/Si were systematically studied by Auger electron spectroscopy(AES) and X-ray photoelectron spectroscopy(XPS). 通過(guò)俄歇電子能譜(AES),X光電子能譜(XPS)等分析手段系統研究了在Si基片上直接生長(cháng)BTO鐵電薄膜過(guò)程中的界面擴散現象。
- Some results of quantitative analysis, including depth quantitative analysis, on Model JAMP-10 Auger Electron Mieroprobc are given. 給出了利用JAMP-10型俄歇電子譜儀進(jìn)行定量分析(包括深度定量分析)的一些結果。
- Objective To calculate the mean absorbed doses at celluar and subcellular levels for uniformly and non-uniformly distributed Auger electron emitters. 目的給出一種新的方法，計算俄歇電子發(fā)射核素在細胞中均勻分布和非均勻分布時(shí)細胞和細胞核的平均吸收劑量以及吸收劑量在細胞內的分布。
- The composition of surface layer of uranium and treated uranium have been analyzed respectively by Auger Electron Spectroscopy (AES). 用俄歇電子譜(AES)分析了鈾試樣處理前后表層的成分變化。
- Abstract The heated oxidation film of U-Nb alloy is studied by auger electron spectroscopy (AES) at different temperature in the high vacuum chamber. 摘要 用俄歇電子能譜(AES)研究了高真空下,環(huán)境溫度對鈾鈮合金真空氧化膜的影響。
- Auger electron spectroscopy (AES), scanning electron microscopy (SEM) and atomic force microscopy (AFM) are used to analyze component and surface morphology of the films. 用俄歇電子能譜(AES)、掃描電鏡(SEM)和原子力顯微鏡(AFM)對薄膜的組成成分和表面形貌進(jìn)行了分析。
- back scattered electron detector 反散射電子檢測器
- The initial oxidation of uranium and uranium samples which were overlapped energy ion-implanted with C ions was studied respectively by Auger electron spectroscopy(AES). 用俄歇電子能譜(AES)分別對高真空室中鈾樣品及多能量疊加離子注入碳鈾樣品與氧氣吸附及初始氧化過(guò)程進(jìn)行了研究。
- efficient backscattered electron detector 高效反向散射電子探測器
- The obtained self-assembled monolayers were characterized with water contact angle goniometry, auger electron spectroscopy and X-ray photoelectron spectroscopy. 使用接觸角、俄歇電子能譜及X射線(xiàn)光電子能譜等方法進(jìn)行表征。
- The Auger electron spectromy (AES) and globe angle X-ray diffraction (GAXRD) are applied to analyze the element distribution and phase structure of modified layers. 利用俄歇能譜儀(AES)分析改性層中元素的濃度分布,用低角度X射線(xiàn)衍射儀(GAXRD)分析離子注入層的結構。
- Auger effects available: 1)Auger surface effect 2) Auger peak width and chemical effect 3) Auger recom-bination effect 4) Auger electron structure effect and Auger surface state effect. 俄歇效應,提出可采用的俄歇效應有:(1)俄歇表面效應,(2)俄歇峰寬和化學(xué)效應,(3)俄歇復合,(4)俄歇電子結構效應和俄歇表面態(tài)效應。
