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- 非摻雜半絕緣態(tài)InP中補償缺陷正電子壽命譜的研究Study of Compensation Defects in Undoped Semi-Insulating InP by Positron Lifetime Spectroscopy
- 非摻雜半絕緣InPundoped semi-insulating InP
- 摻Fe或同時(shí)摻Fe和Ga半絕緣InP的電學(xué)性質(zhì)分析Analysis on Electrical Properties of Semi-Insulating Fe-and Ga-Codoped InP and Fe-Doped InP
- 非not-
- 半絕緣InP中深能級缺陷對電學(xué)性質(zhì)的影響和缺陷的控制Influence of Deep Level Defects on Electrical Properties and Defect Control in Semi-Insulating InP
- 非摻雜多晶硅un-doped polysilicon
- 半semi-
- 半年half a year
- 非摻雜GaN的黃光發(fā)射模型確定Determination of yellow photoluminescence model in undoped GaN
- 半天half of the day
- 非摻雜晶體non-doped crystal
- 半小時(shí)halfhour
- 半角DBC case
- 非摻雜材料undoped material
- 半月half-moon
- 非摻雜單晶體undoped single crystal
- 上半first half
- 非我nonego
- 半場(chǎng)half-court
- 不到長(cháng)城非好漢He who has never been to the Great Wall is not a true man.
