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- 砷化鎵MMICGaAs MMIC
- 用于手機砷化鎵MMIC射頻開(kāi)關(guān)的研制The Research on GaAs MMIC RF Switch for Handset
- 砷化鎵負電子親合勢光電陰極激活靈敏度在線(xiàn)檢測與分析ON-LINE INSPECTION AND ANALYSIS OF THE ACTIVE SENSITIVITYOF GaAs NEGATIVE ELECTRON AFFINITY PHOTOCATHODE
- 磷化砷化鎵片的最大光致發(fā)光波長(cháng)及其相應成分的試驗方法Test Method for Wavelength of Peak Photoluminescence and the Corresponding Composition of Gallium Arsenide Phosphide Wafers
- 用階躍恢復法測定砷化鎵結型(p-n和M-S結)兩極管的載流子壽命MEASUREMENT OF CARRIER LIFETIME OF GaAs DIODES WITH p-n AND M-S JUNCTIONS BY STEP RECOVERY METHOD
- 在砷化鎵襯底上異質(zhì)外延磷化鎵的表面缺陷與綠色發(fā)光管(摘要)Surface Defects of Heteroepitaxial Layers of GaP on GaAs Substrates and Green Emitting Electroluminescent(EL) Diodes(Abstract)
- 給出了國產(chǎn)WC50型低噪聲砷化鎵場(chǎng)效應晶體管在C波段的噪聲參數及在C、S波段的s參數。Noise parameters at the C-band and s parameters at the C/S band for WC50 low noise GaAs FET are provided.
- 砷化鎵熔體GaAs melt
- 砷化鎵gallium arsenide
- 低溫砷化鎵LT-GaAs
- 砷化鎵材料gallium arsenide material
- 磷砷化鎵gallium arsenide phosphide
- 砷磷化鎵gallium arsenide-phosphide
- 砷化鎵層gallium arsenide layer
- 砷化鎵磷gallium arsenide phosphide
- ZnS型晶體<110>溝道坑不對稱(chēng)性及錫在砷化鎵中的晶格位CHANNELING DIP ASYMMETRY OF <110> AXIS IN ZnS-TYPE CRYSTALS AND THE LATTICE LOCATION OFIMPURITY Sn ATOMS IN GaAs CRYSTAL
- 砷化鎵外延gallium arsenide epitaxy
- 砷化鎵襯底gaas substrate
- 薄膜砷化鎵thin film gallium arsenide
- 砷化鎵單晶arsenide gallium monocrystal
