您要查找的是不是：
- 深亞微米pMOS器件deep submicron pMOSFET' s
- 深亞微米器件Deep submicron device
- 考慮界面態(tài)電荷高斯分布模型以及Poole-Frenkel效應,對SiC MOSFET補償電流源模型進(jìn)行了修正,分析了造成6H-SiC NMOS與PMOS器件補償電流源變化的原因.The analytical model which comprises the temperature compensation for the SiC MOSFET is modified by considering the Gauss model of interface state density and the Poole-Frenkel effect.
- 動(dòng)態(tài)電子束探針檢測技術(shù)在亞微米和深亞微米IC失效分析中的應用研究Study of dynamic electron-beam probe techniques in submicron and deep submicron IC
- 深亞微米槽柵PMOSFET幾何結構參數對抗熱載流子特性的影響INFLUENCE OF GEOMETRICAL STRUCTURE PARAMETERS ON HOT-CARRIER-EFFECT IN DEEP-SUBMICRON GROOVED GATE PMOSFET
- 人工神經(jīng)網(wǎng)絡(luò )在解深亞微米MOSFETs反型層量子效應模型中的應用Solving a Model of Inversion Layer Quantization Effects in Deep Submicron MOSFETs with Artificial Neural Networks
- 一種基于靈敏放大器的新型觸發(fā)器及其通過(guò)偽PMOS動(dòng)態(tài)技術(shù)的速度改進(jìn)Novel General-Purpose Sense Amplifier-Based Flip-Flop and Its Further Speed Improvement by Pseudo-PMOS Dynamic Technique
- 賓夕法尼亞Pennsylvania
- 當工藝水平發(fā)展到深亞微米級,互連線(xiàn)時(shí)延比重已經(jīng)占據總時(shí)延的絕大部分。As the technology proceeds to DSM, the delay of interconnect has been the dominant portion in all delays.
- 歐亞大陸Eurasia
- 深亞微米槽柵NMOSFET結構參數對其抗熱載流子特性的影響Study on the Influence for Structure Parameters on the Hot-Carrier-Effect Immunity in NMOSFET
- 用可見(jiàn)激光在聚(氨酯-酰亞胺)表面制備周期性亞微米結構Preparation of Periodic Sub-micrometer Structure by Visible Laser on Poly(urethane-imide) Surface
- 亞微米PYXSubmicron PYX
- 亞微米直徑光纖Submicro-diameter optical fiber
- W亞微米管加熱電極W sub-micron tube
- 亞微米SiCp/Al基復合材料Sub-micrometer SiCp/Al composites
- 迎接亞微米技術(shù)時(shí)代的到來(lái)Greet the Advent of the Era of Sabmicron Technology
- 三氧化鉬亞微米帶的制備與表征PREPARATION AND CHARACTERIZATION OF MOLYBDENUM TRIOXIDE SUB-MICROBELTS
- 類(lèi)球形亞微米碳化硅粉體的制備PREPARATION OF SPHERE-LIKE SUBMICRON SILICON CARBIDE POWDER
- 亞微米級NiS空心球的水熱法合成Preparation of hollow NiS submicrometer spheres by hydrothermal method
