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- 功率MOSFET器件power MOSFET device
- 采用硅柵結構的自對準離子注入工藝，研制成功了源漏擊穿電壓BVDS為120V、輸出功率5.1W、功率增益8dB、跨導650mS、截止頻率fT為270MHz的高壓雙柵功率MOSFET器件。A high voltage power MOSFET with double Si gate is developed using self aligned ion implantation process. The fabricated device has a BV DS of 120 V, an output power of 5.1 W, a power gain of 8 dB, a transconductance of 650 mS and an f T of 270 MHz.
- 將氧化層厚度作為可調參數 ,用這個(gè)經(jīng)驗公式可以很好地擬合超薄氧化物 n MOSFET器件的直接隧穿電流 .This expression can be used to calculate the DT current for nMOSFETs with ultra thin oxide when the oxide thickness is considered as an adjustable parameter.
- 功率MOSFETpower MOSFET
- 納米級MOSFET器件模擬的載流子輸運模型The Carrier Transport Model of Nano-Scale MOSFET Device Simulation
- 摘要推導了雙柵MOSFET器件在深度方向上薛定諤方程的解析解以求得電子密度和閾電壓。The analytical solutions to 1D Schr?dinger equation (in depth direction) in double-gate (DG) MOSFETs are derived to calculate electron density and threshold voltage.
- 功率MOSFET管power MOSFET
- 額定功率power rating
- 電機功率power of motor
- 功率MOSFET模塊power MOSFET module
- 最大功率ultimate output
- 總功率gross power
- 輸入功率input power
- 發(fā)射功率launching power
- 硅功率器件Si power device
- 視在功率apparent output
- 該器件將霍爾發(fā)電機、小型信號放大器、穩定斬波特性、鎖存和MOSFET輸出整合在單硅片上。This device includes, on a single silicon chip, a Hall-voltage generator, a small-signal amplifier, chopper stabilization, a latch, and a MOSFET output.
- 軸功率shaft power
- 裝機功率installed power
- 低功率underpower
