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- 光CVD淀積條件對a-Si:H薄膜的影響(英文)Influence of Deposition Conditions on Properties of a-Si:H Prepared by Photo-CVD
- 光CVD系統氣流模式分析Analysis of Gas Flow Mode in Fhoto-CVD System
- 光light
- TiO_2薄膜的聚集密度提高了20%，折射率從常規工藝的2.03提高到2.37。The IAD increases the packing density of TiO2 films by 20%25, hence the refractive index arises from 2.03 upto 2.37.
- 微波激勵氙VUV光源直接光CVD設備及其應用DIRECT PHOTO-CVD EQUIPMENT WITH VUV LIGHT XENON SOURCE EXCITED BY MICROWAVE AND ITS APPLICATION
- CVD法大面積SnO_2薄膜的沉積LARGE AREA SnO_2FILMS DEPOSITED BY CVD METHOD
- 薄膜film
- 研究了VUV（真空紫外）光直接光CVD（化學(xué)汽相淀積）SiO2/Si界面微結構缺陷與襯底溫度（Ts）的關(guān)系。Research is made on the effect of substrate temperature(?T??s)on defects of SiO?2/Si interface caused by vacuum ultraviolet (VUV)photochemical vapor deposition (CVD).
- TiO_2薄膜TiO_2 film
- 光的photic
- 用光finish up
- 摻雜態(tài)聚苯胺蜂窩狀有序多孔薄膜的制備及形成機制的探討Fabrication of Ordered Honeycomb Structure Porous Film with Doped Polyaniline and Its Formation Mechanism
- 走光fog
- ECR-PECVD制備SiO_2薄膜中襯底射頻偏壓的作用INFLUENCE OF RF SUBSTRATE BIAS ON SiO_2 FILMS PREPARED BY ECR PECVD
- 夜光noctilucence
- 探索了制備摻鉺、鐿鉺共摻Al_2O_3薄膜的三種工藝方法。The Er-doped or Yb:Er co-doped Al_2O_3 films have been prepared by three kinds of technique.
- SnO_2薄膜的物理特性PHYSICAL PROPERTIES OF SnO_2 FILMS
- %SiO_2的CoPt合金薄膜的有序化溫度明顯升高到了We also found the addition of SiO_2 in CoPt thin film increases the ordered temperature.
- 摻鉺nc-Si/SiO_2薄膜中nc-Si和Er~(3+)與非輻射復合缺陷間相互作用對薄膜發(fā)光特性的影響Influence of coupling between Er~( 3+) , nc-Si and nonradiative centers on photoluminescence from Er~( 3+) -doped nc-Si/SiO_2 films
- 不同氧氬比例對氧化硅(SiO_2)薄膜的結構及性能的影響Effects of O_2/Ar Flow Ratio on the Structure and Properties of Silicon Dioxide (SiO_2) Films
