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- In a bipolar transistor, the control area or the electrical connection to the control area. 在雙極晶體管中,指控制區域或和控制區相連的導電連接。
- The ionizing radiation responses of NPN bipolar transistor and NMOSFET at different dose-rates have been investigated. 摘要研究了NPN雙極晶體管和NMOSFET在不同劑量率環(huán)境下的電離輻照效應。
- With respect to a bipolar transistor, the condition in which the gate current equals or exceeds the value necessary to provide full emitter collector conduction. 就雙極型晶體管而言,其門(mén)電流等于或超過(guò)必要的值,使發(fā)射極集電極充分導通的一種狀態(tài)。
- Mixing-signal stimulation method can enhance dissipation of bipolar transistor evidently, especially first cascade amplifying circuits. 理論分析和實(shí)踐結果都表明，本文所提出的方法能有效地改善有源低熱器件的紅外熱圖像。
- This paper presents a novel hybrid circuit breaker (HCB) device whose motion part is composed of Insulated Gate Bipolar Transistor (IGBT) and Mechanical Circuit Breaker (MCB). 摘要將機械開(kāi)關(guān)的靜態(tài)特性和固態(tài)開(kāi)關(guān)的快速性相結合研制了一種新型混合式斷路器裝置。
- An insulated gate bipolar transistor (IGBT) device characterization tool allows users to quickly and accurately create average and dynamic models of power semiconductor devices. 絕緣柵雙極晶體管（IGBT）器件描述工具，使用戶(hù)可以快速準確地創(chuàng )建功率半導體器件的平均和動(dòng)態(tài)模型。
- In the 1960s the IC market was broadly on bipolar transistors. 六十年代集成電路市場(chǎng)主要為雙極型晶體管。
- The recent development of pulse modulator is to use solid-state switches such as IGBT (Insulated Gate Bipolar Transistor ) and power MOSFET(Metal Oxide Semiconductor Field Effect Transistor)etc. as substitute for hydrogen thyratrons. 用IGBT(絕緣柵雙極性晶體管)和功率MOSFET(金屬氧化物半導體場(chǎng)效應管)等固態(tài)功率開(kāi)關(guān)器件代替氘閘流管開(kāi)關(guān)是脈沖調制器技術(shù)的最新發(fā)展方向。
- This device consists of a n-channel depletion mode MOS transistor,a lateral pnp bipolar transistor and a resistor and has the behavior of "dual negative resistance" characteristics and easily controlled resistance in positive resistance region. 該器件由一n溝耗盡型MOS管、一橫向pnp雙極晶體管和一個(gè)電阻集成而得。 它具有“雙負阻”特性和正阻區阻值易于控制等特點(diǎn)。
- InP/GaAs 0.5 Sb 0.5 /InP DHBT (double heterojunction bipolar transistor) is grown by MOCVD (metalorganic chemical vapor deposition). The influence of material quality on device performance is studied. 采用金屬有機化學(xué)氣相沉積生長(cháng)了 In P/ Ga As0 .;5Sb0
- Analysis indicates the potentialities that the new device would show significantly higher power than that of a bipolar transistor and a FET at the microwave frenquencies, and have a rather wider frequency band. 分析表明這種新器件在微波頻率下具有遠高于雙極型晶體管和場(chǎng)效應晶體管的功率潛力;并可得到較寬的帶寬.
- Parameter calculations of rectification, filter, inverter, driving circuits of Insulated-Gate Bipolar Transistor (IGBT), and peripheral circuits are discussed in the design of main circuit. 主電路部分給出了整流、濾波、逆變器、IGBT驅動(dòng)電路的外圍器件各個(gè)環(huán)節的參數的計算。
- bidirectional bipolar transistor 雙向雙極晶體管
- insulated gate bipolar transistor 絕緣的雙級晶體管
- equivalent circuit of bipolar transistor 雙極晶體管等效電路
- switching time of bipolar transistor 雙極晶體管開(kāi)關(guān)時(shí)間
- A New Bipolar Transistor Current Circuit 一種雙極型基本電流鏡的改進(jìn)電路
- IGBT Insulated Gate Bipolar Transistor 絕緣柵雙極晶體管
- X-band Power Heterojunction Bipolar Transistor X波段功率異質(zhì)結雙極晶體管
- In this paper, a novel negative-differential-resistance (NDR) device composed of three heterojunction bipolar transistors (HBT) is investigated. 摘要: 本篇文章所介紹的負微分電阻元件(negative-differential-resistance；
