Unfortunately, the quality of GaN layers grown on SiC is inferior to that grown on the commonly used sapphire substrate due to the relative poor surface properties of SiC. 不幸的，由于碳化矽差表面性質(zhì)使得氮化鎵在碳化矽成長(cháng)品質(zhì)無(wú)法與在一般常用藍寶石基板相比。
Theoretical analysis shows that the cyclone field makes the separation by density come true and also supplies the separating method and conditions by surface floatability. 理論分析表明，旋流力場(chǎng)在實(shí)現按密度分離物料的同時(shí)，又提供了一種高效的按表面性質(zhì)分選的方法與條件。
