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- Study on Surface Oxide Layer of Anode Button 陽(yáng)極帽合金表面氧化層研究
- A Study on the Surface Oxide Layer Disposing and Modification of Nano-Sized Copper Powers 導電納米銅粉表面的氧化層處理和改性研究
- Epma on the Composition of the Si_3N_4 Surface Oxidation Layer Si_3N_4陶瓷表面氧化層組成的EPMA分析
- Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer. 頂部硅膜厚度-頂部硅層表面和氧化層表面間的距離。
- The nitride on oxide layers remains intact. 氧化物表層上面的氮化物保持原狀不動(dòng)。
- Buried Oxide Layer (BOX) - The layer that insulates between the two wafers. 氧化埋層(BOX)-在兩個(gè)晶圓片間的絕緣層。
- The temperature dropping speed and production rhythm were increased,and the surface oxid of plate was decreased after this system was used. 應用汽霧冷卻系統后,在保持鋼板組織和力學(xué)性能不受影響的前提下,提高了鋼板的降溫速度,加快了生產(chǎn)節奏;經(jīng)汽霧冷卻的鋼板,表面氧化層減薄1/2。
- This might damage the delicate red cuprous oxide layer we need to make to solar cell work. 這可能破壞脆弱的紅色氧化亞銅層我們需要作出的太陽(yáng)能電池工作。
- The hot-formation method for the preparation of the doped semiconducting oxide layer on the Ti substrate was studied. 研究了熱形成法在鈦表面制備摻雜的鈦基氧化物半導體的方法。
- charge in the oxide layer and surface state 氧化層電荷與界面態(tài)
- Formation of an aluminum oxide layer on exposed surfaces makes this metal very corrosion resistant. Not recommended for high pH wet systems. 鋁青銅表面的鋁氧化層結晶體,使其具有很強的抗腐蝕能力。但是建議不要在高ph值的潮濕環(huán)境中使用。
- Temperatures may reach 700℃ and surface oxidation becomes critical. 溫度高達700℃，表面氧化成為關(guān)鍵問(wèn)題。
- For this purpose, at least one indium tin oxide layer (10) is present in at least one of the further recording stacks (3). 為此目的，至少有一個(gè)銦錫氧化物層(10)位于至少一個(gè)另外的記錄疊(3)中。
- This is not the oxide we want, but it will flake off later, showing the reds, oranges, pinks, and purples of the cuprous oxide layer underneath. 這不是我們想要的氧化物，但它鱗片關(guān)閉后，顯示紅，橙，粉紅色和紫色的氧化亞銅層下面。
- The effec ts of coated materials,suface oxidation layer of samples and surface roughness of dies on fric tion coefficient are analyzed. 文中也分析了諸如涂層材料、試樣表面氧化層、模具表面粗糙度等對摩擦因數的影響。
- In this paper, silicon oxidation layer was fabricated on plastic surface using sol-gel method, and the fabricated SiO2 layer was used to extract DNA. 摘要本文用溶膠-凝膠法在塑料表面制作二氧化硅涂層，并利用制作的二氧化硅層來(lái)提取DNA。
- The image sensor can include a color filter on a semiconductor substrate, a microlens on the color filter layer, and a carbon-doped low temperature oxide layer on the microlens. 所述圖像傳感器可包含半導體襯底上的彩色濾光層、所述彩色濾光層上的微透鏡、和在所述微透鏡上的碳摻雜的低溫氧化物層。
- In recent years, a strong red luminescence has been often observed after surface oxidization in air. 過(guò)去這幾年來(lái)，科學(xué)家也發(fā)現奈米矽在空氣中予以表面氧化處理之后，它將產(chǎn)生更強的紅光。
- As compared with the MS structured device, the MOS device exhibits more perfect interface, because the oxide layer can effectively prevent the interdiffusion of Pd and GaAs. 研究結果顯示，降低無(wú)電鍍鍍浴之組成：如整體鍍浴濃度、前驅鹽濃度、還原劑濃度等變因，均將使鈀膜粒徑減小，分布均勻。而所得元件之二極體電性愈佳。
- The basic principle of surface-treating technique for protecting metals from carburization by forming a dense and continuous oxide layer with high stability was introduced. 闡明了采用表面處理防止金屬材料產(chǎn)生滲碳腐蝕的基本思路是在欲防護工件表面形成具有高穩定性的致密、連續的氧化物。
