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- Pulse power with fast rise time technology was applied in many fields such as nuclear physics, electron beam, accelerator, laser, HPM etc. 高壓大電流快脈沖技術(shù)在核物理技術(shù)、電子束、加速器、激光、HPM等許多現代科學(xué)技術(shù)領(lǐng)域都有廣泛的應用。
- Quantum Effect Devices : Electron waveguides, single electron transistors, etc. 26量子效應元件：電子波導，單電子電晶體等。
- An amplifier with very wide frequency response which can amplify pulses without distortion of the short rise time of the leading edge. 頻率響應極寬的一類(lèi)放大器，可以無(wú)畸變地放大前沿上升時(shí)間短的脈沖。
- The concept of single electron transfer is used asan example to elucidate the reaction mechanism of aromatic nitration. 文中還以實(shí)例用此理論解釋了芳烴硝化反應機理。
- Thus, even large values of capacitance shunting the input will have negligible effect on rise time. 所以，即使并聯(lián)在輸入端的電容很大，其對上升時(shí)間的影響也很小。
- Meschke and his Helsinki University of Technology peers were excited because they built the transistor as a single electron device. 麥斯科和他的赫爾辛基技術(shù)學(xué)院同事感到非常激動(dòng)，因為 他們制造了單電子設備類(lèi)的晶體管。
- The structures, principles, characters and applications of single electron transistors are clarified,based on the traditional theories. 基于傳統單電子理論,闡述了單電子晶體管的結構、原理、特點(diǎn)及應用。
- Improved insulation protection against transient spikes, high frequencies, and short rise time pulses without increasing insulation thickness. 在不增加絕緣厚度的情況下,提高了抗瞬間沖擊、耐高頻性、耐陡升脈沖性。
- The measurement results show that the rise time is about 2.58ns and the decay time is about 55 ns of the EMP simulator output waveform. 測量結果表明此電磁脈沖模擬器可以輸出前沿大約為2 58ns、衰落時(shí)間約55ns的雙指數脈沖波。
- A method is proposed to exactly diagonalize the Hamiltonian of a N-layer quantum dot containing a single electron in each dot in arbitrary magnetic fields. 摘要用精確對角化的方法研究了處于外磁場(chǎng)中的N層單電子垂直耦合量子點(diǎn)系統，計算了基態(tài)躍遷隨外磁場(chǎng)的變化關(guān)系。
- Transient characte-ristics of the HPT have been measured with 80 ps Gaussian pulse,and FWHM of the outputpulse is 1.20 ns with a rise time of 400 ps. 在 80 ps Gaussian光脈沖作用下;其輸出脈沖上升時(shí)間為 400ps.;半峰寬為1
- We studied the ground-state-transition of a vertically coupled four-layer single electron QDs system under a magnetic field by the exact diagonalization of the Hamitonian matix. 摘要用精確對角化的方法研究了處于外磁場(chǎng)中四層單電子垂直耦合量子點(diǎn)系統。
- Rise time in a feedback picoammeter is a function of the physical or stray capacitance shunting the feedback resistance (RFB). 反饋型皮安計的上升時(shí)間是反饋電阻（RFB）上并聯(lián)的物理電容或寄生電容的函數。
- The design and analysis of single electron device is also an important topic in this course, in order to lay a foundation for the students on nanoelectronics . 單電子元件之解析與設計亦是本課程重點(diǎn)，為學(xué)生籌備奈米時(shí)代之電子元件深厚的基礎。
- Due to the high degree of voltage amplification, this stage regenerates the voltage swing and the rise time of the incoming signal. 因電壓放大的高倍數，這一級一則改變輸入電壓的擺幅，二則改變引入信號的上升時(shí)間。
- Ionized by energetic starlight, a hydrogen atom emits the characteristic red H-alpha light as its single electron is recaptured and transitions to lower energy states. 被高能星光電離后，在重新捕獲失去的電子并跳躍到較低能量狀態(tài)時(shí)，氫原子放射出特有的紅色氫-阿爾發(fā)射線(xiàn)。
- The rise time of a feedback picoammeter is normally limited by the time constant of the feedback resistor (RF) and any shunting capacitance (CF). 反饋皮安表的上升時(shí)間通常受反饋電阻器（RF）和并聯(lián)電容（CF）形成的時(shí)間常數的限制。
- Used in Electronic lighting ballasts and High voltage power Supplies of High frequency and High pulse rise time circuits. 適用于電子鎮流器和電源開(kāi)關(guān)等高頻脈沖和高頻振蕩電路中。
- Experimental results shows the shaped 2.2 ns pulse has a rise time less than 50 ps,and it is precisely synchronized with the 100 ps pulse with time jitter less than 4 ps. 實(shí)驗測得了該系統輸出的2.;2 ns整形光脈沖具有小于50 ps的上升沿;與100 ps啁啾脈沖的時(shí)間抖動(dòng)小于4 ps。
- The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electron tunneling were described with single electron transistor(SET) as the research object. 以單電子晶體管為研究對象,系統闡述了庫侖阻塞、庫侖臺階、單電子隧穿等物理現象的產(chǎn)生機理。
