This paper describes the study on the component and structure of the silicon oxide and silicon nitride films by infra-red absorbed spectrum. 利用紅外吸收譜等微觀(guān)分析對氧化硅和氨化硅薄膜的成分和結構進(jìn)行了研究。
Besides, thin-film silicon technologies have also been developed to place a thin film of amorphous or microcrystalline silicon onto flat large-area substrates such as glass. 另外，薄膜硅技術(shù)也被開(kāi)發(fā)出來(lái)，將非晶硅或者微晶硅薄膜放到玻璃那樣的平的大面積襯底上。
