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- This kind of relay is constituted by integrated operational amplifiers, CMOS circuit, etc. 采用集成運算放大器和cmos電路等構成了這一繼電器。
- R. J. Baker, H. W. Li, D. E. Boyce, CMOS Circuit Design, Layout, and Simulation, Wiley Inter-Science, 1997. 邱先成，“雜訊指數比的基本概念(上)”，電子技術(shù)雜志，2003年3月。
- Power components of the core are analyzed based on energy di ssipation theory in CMOS circuit. 根據CMOS電路的能耗機制,對已有微處理器內核進(jìn)行了功耗分析。
- This is due to the fact that each transistor in a CMOS circuit is actually made from a PMOS transistor and an NMOS transistor. 這是由于CMOS里的每一個(gè)晶體管都是由一個(gè)PMOS和一個(gè)NMOS晶體管組成的。
- The effects shown in Figure 2 are typical of all CMOS circuits. 圖2所示的電流效應是所有CMOS電路所特有的。
- Guided by the switch signal-theory, this paper studied how to realize threshold-controlling in current-mode CMOS circuit. 本文以開(kāi)關(guān)信號理論為指導，對電流型CMOS電路中如何實(shí)現閾值控制進(jìn)行研究。
- This is due to the fact that each transistor in a CMOS/" target="_blank">CMOS circuit is actually made from a PMOS transistor and an NMOS transistor. 這是由于cmos里的每一個(gè)晶體管都是由一個(gè)pmos和一個(gè)nmos晶體管組成的。
- This paper explores nanometer scale CMOS circuits leakage mechanisms and device and circuit techniques to reduce leakage power consumption. 本文分析了納米級CMOS電路的各種漏電流組成機制并提出了相應的降低技術(shù)。
- Alter the full adder cell from NMOS circuit to CMOS circuit.Basing on it, the paper introduces the design flow of converting NMOS circuit into CMOS circuit and some questions of the design. 將其中的全加器單元NMOS電路改為CMOS電路，本文以此為例，介紹了將NMOS電路改為CMOS電路時(shí)，建立CMOS單元庫的流程及應注意的問(wèn)題。
- All circuit blocks of ADPCM codec are studied and the ADPCM algorithm is described and implemented with mixed-signal CMOS circuits specially. 整個(gè)系統包括：內置振蕩器，時(shí)鐘產(chǎn)生器，放大器，前置運算放大器，自動(dòng)增益控制器（AGC），ADPCM編解碼器和數模轉換器等，我們著(zhù)重完成了ADPCM編解碼器核心算法的電路設計。
- Guided by the switch signal-theory, this paper discussed how to realize the threshold controlling in current-mode CMOS circuits. 摘要以開(kāi)關(guān)信號理論為指導，對電流型CMOS電路中如何實(shí)現閾值控制進(jìn)行了討論。
- High leakage current in deep sub-micron regimes is a significant contributor to the power dissipation of CMOS circuits as the CMOS technology scales down. 摘要隨著(zhù)CMOS工藝的進(jìn)一步發(fā)展，漏電流在深亞微米CMOS電路的功耗中變得越來(lái)越重要。
- Compared to other actuation mechanisms, electrostatic RF MEMS switches have small footprint, extremely low power consumption, high switching speed, and ease of integration with CMOS circuits. 然而傳統上在射頻前端系統的微波開(kāi)關(guān)大都使用固態(tài)電子技術(shù)制造的場(chǎng)效電晶體或二極體，其優(yōu)點(diǎn)為開(kāi)關(guān)狀態(tài)切換速度快，但效能會(huì )隨著(zhù)操作頻率的提高而影響其表現。
- Distributor of multi-spot welding machine using CMOS circuit 采用CMOS電路的多點(diǎn)焊分配控制器
- A New CMOS Circuit Structure for Hot-Carrier Resistance 一種抗熱載流子退化效應的新型CMOS電路結構
- Leakage Power Simulator of CMOS Circuit Under DSM Process 深亞微米CMOS電路漏電流快速模擬器
- There are two breakers in this circuit. 這個(gè)電路里面使用了兩個(gè)斷路器。
- A replaceable printed circuit board. 一種可替換的印制電路板。
- The circuit of the city walls is three miles. 環(huán)繞本市城墻的周長(cháng)是三英里。
- Test Generation at Switch Level for CMOS Circuits CMOS電路開(kāi)關(guān)級測試生成
