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- multiple quantum well layer 多量子阱層
- And the photocurrent measurement result of asymmetric quantum well consisting of thin coupling layer is not obvious, so we explain it indirectly by photoreflectance. 而非對稱(chēng)式含薄耦合層量子井的光電流量測結果較不明顯，而藉著(zhù)光調制反射光譜間接說(shuō)明。
- We have analyzed the single layer material, quantum well material and material comprise of superlattice by using kinematics and dynamics in a comparative way. 3.;對單外延層結構材料、量子阱結構材料、含超晶格結構材料等，分別應用動(dòng)力學(xué)理論和運動(dòng)學(xué)理論作了對比分析。
- Dual band quantum well infrared photodetector large format array chips[J]. 引用該論文 種明;馬文全;蘇艷梅;張艷冰;胡小燕;陳良惠.
- Investigation of Quantum Well Lasers which Have Superlattice Buffer Layers[J]. 引用該論文 張福厚;宋珂;邢建平;郝修田;曾一平.
- Theory models for quantum well states in photoemission spectroscopy[J]. 引用該論文 王得勇;劉杰;賈金鋒;劉洪;薛其坤.
- E. H. Li, Quantum well intermixing, Gordon and Breach Science Publishers, 2000. 施敏;半導體物理元件與制作技術(shù)(第二版);國立交通大學(xué)出版社;民國91年.
- The critical strain of the well layer for some typical QW and the biggest allowable strain of the strained bulk materials are calculated. 計算了一些典型量子阱結構的阱層臨界應變和應變體材料的最大允許應變。
- Fracturation is an important measure to increase oil production,and it is complicated to select a well layer to be fractured. 壓裂是油田重要的增產(chǎn)措施,合理選擇壓裂井層是一項十分復雜的工作。
- GaSb epilayers and GaAsSb/GaAs quantum wells were investigated. 所研究的材料有銻化鎵以及銻砷化鎵/砷化鎵量子井。
- New progress of exciton condensation in coupled quantum wells[J]. 引用該論文 閆占彪;郭震寧.
- Intersubband optical absorption in hyperbolic quantum wells[J]. 引用該論文 譚鵬;路洪.
- Detectors (contd.): Vertical vs. in-plane geometries. Quantum well intersubband photodetectors. 23光偵測器(續)：垂直與平面結構。量子井次能帶間躍遷型光偵測器。
- Detectors (contd.) : Vertical vs. in-plane geometries. Quantum well intersubband photodetectors. 垂直與平面結構。量子井次能帶間躍遷型光偵測器。
- Finally, we got the 940nm InGaAs/AlGaAs strained quantum well semiconductor laser. 最終獲得InGaAs/AlGaAs結構的940nm應變量子阱半導體激光器。
- Laser Diodes (contd.): In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting. 21雷射二極體(續)：平面雷射：雙異質(zhì)結構，量子井，多重電極，面發(fā)射。
- Laser Diodes (contd.) : In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting. 平面鐳射：雙異質(zhì)結構，量子井，多重電極，面發(fā)射。
- InGaAs/GaAs/AlGaAs Strained Quantum Well Lasers with Window Regions Fabricated by Impurity free Vacancy Disordering[J]. 引用該論文 徐遵圖;徐俊英;楊國文;張敬明;李秉臣;陳良惠;沈光地.
- The spectral width was increased from 18nm of normal integrated SLD devices to 37nm of quantum well intermixed devices. 和普通的集成超輻射器件相比，在相近的輸出功率下，器件的光譜寬度從18nm提高到了37nm。
