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- Finally, we got the 940nm InGaAs/AlGaAs strained quantum well semiconductor laser. 最終獲得InGaAs/AlGaAs結構的940nm應變量子阱半導體激光器。
- The wavelength tunable range was widened in a three electric section strained multi quantum well distributed feedback laser by using the gain lever effect. 在三段電注入應變多量子阱分布反饋激光器中, 應用增益杠桿效應擴大了波長(cháng)的可調諧范圍。
- Laser Diodes (contd.): In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting. 21雷射二極體(續)：平面雷射：雙異質(zhì)結構，量子井，多重電極，面發(fā)射。
- Laser Diodes (contd.) : In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting. 平面鐳射：雙異質(zhì)結構，量子井，多重電極，面發(fā)射。
- Dual band quantum well infrared photodetector large format array chips[J]. 引用該論文 種明;馬文全;蘇艷梅;張艷冰;胡小燕;陳良惠.
- Investigation of Quantum Well Lasers which Have Superlattice Buffer Layers[J]. 引用該論文 張福厚;宋珂;邢建平;郝修田;曾一平.
- Hybrid optical bistable laser is composed of phototransistor and semiconductorlaser diode. Based on this bistable laser,AND. NOR. 用半導體激光器和光晶體管組成了組合光雙穩激光器;以不同的電路結構實(shí)現了與、或、非、與非、或非光邏輯門(mén).
- Theory models for quantum well states in photoemission spectroscopy[J]. 引用該論文 王得勇;劉杰;賈金鋒;劉洪;薛其坤.
- E. H. Li, Quantum well intermixing, Gordon and Breach Science Publishers, 2000. 施敏;半導體物理元件與制作技術(shù)(第二版);國立交通大學(xué)出版社;民國91年.
- Laser Diodes : Feedback and stimulated emission. Cavity design; double heterostructure concept. Quantum well, wire, dot active regions. Strained layers; pseudomorphic active regions. 回饋與受激放射。共振腔設計，雙異質(zhì)結構的概念，量子井、量子線(xiàn)與量子點(diǎn)的主動(dòng)層。應變層，假晶材料的主動(dòng)層。
- Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes. 雜質(zhì)擴散誘導量子阱混雜技術(shù)可用于制作腔面非吸收窗口, 提高大功率半導體激光器的輸出功率。
- The results discover that AlInGaAs strained quantum well lasers excel AlGaAs laser in slope efficiency,threshold current and characteristic temperature and so on. 結果發(fā)現AlInGaAs應變量子阱激光器在斜率效率、閾值電流、特征溫度等方面隨溫度變化的特性都優(yōu)于A(yíng)lGaAs激光器.
- GaSb epilayers and GaAsSb/GaAs quantum wells were investigated. 所研究的材料有銻化鎵以及銻砷化鎵/砷化鎵量子井。
- New progress of exciton condensation in coupled quantum wells[J]. 引用該論文 閆占彪;郭震寧.
- Intersubband optical absorption in hyperbolic quantum wells[J]. 引用該論文 譚鵬;路洪.
- Study on GaAs/AlGaAs multiple quantum wells irradiated by free electron laser and OTCS measurement[J]. 引用該論文 鄒睿;林理彬;張猛;張國慶;李永貴.
- Detectors (contd.): Vertical vs. in-plane geometries. Quantum well intersubband photodetectors. 23光偵測器(續)：垂直與平面結構。量子井次能帶間躍遷型光偵測器。
- Detectors (contd.) : Vertical vs. in-plane geometries. Quantum well intersubband photodetectors. 垂直與平面結構。量子井次能帶間躍遷型光偵測器。
- InGaAs/GaAs/AlGaAs Strained Quantum Well Lasers with Window Regions Fabricated by Impurity free Vacancy Disordering[J]. 引用該論文 徐遵圖;徐俊英;楊國文;張敬明;李秉臣;陳良惠;沈光地.
- The spectral width was increased from 18nm of normal integrated SLD devices to 37nm of quantum well intermixed devices. 和普通的集成超輻射器件相比，在相近的輸出功率下，器件的光譜寬度從18nm提高到了37nm。
