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- Diffused red, gallium arsenide phosphide red. 功能應用: Discrete LED indicator.
- Silicon undergoes more Auger recombination than does gallium arsenide because it needs more electrons to be pumped into the upper band to overcome its low light-emission efficiency. 矽的奧格重合發(fā)生率高于砷化鎵，因為矽需要推送更多電子到上層能帶，才能克服過(guò)低的發(fā)光效率。
- A novel BWO with photonic band gap structure[J]. 引用該論文 陳波;錢(qián)寶良;鐘輝煌.
- Common lasing media such as gallium arsenide, in comparison, feature emission efficiencies some 10,000 times larger. 相比之下，砷化鎵等常用雷射材料的發(fā)光效率則是矽的一萬(wàn)倍。
- This thesis extracts a small signal equivalent circuit model from a Gallium Arsenide MESFET device. 因此本論文研究在槽線(xiàn)架構下，不同饋入方式在頻率響應上的影響。
- To produce the electron beam, a laser will fire at a target made of gallium arsenide, knocking off billions of electrons with each pulse. 產(chǎn)生電子射束的方法，是利用一道雷射轟擊用砷化鎵制成的標靶，每個(gè)脈沖會(huì )打出幾十億個(gè)電子。
- The recombination-type semi-insulating gallium arsenide material of high resistivity is prepared by B2O3 liquid encapsulated Czochralski method (LEC). 采用B_2O_3液封直拉法制備出高電阻率的復合型半絕緣砷化鎵。
- In this paper, polyferric silicate sulfate (PFSS) was prepared and arsenic-containing wastewater from gallium arsenide plant was flocculated by it. 用自制的無(wú)機高分子聚合硅酸鐵(PFSS),對砷化鎵生產(chǎn)中的含砷廢水進(jìn)行了混凝處理。
- Arsenic containing wastewater from gallium arsenide production was treated by coagulation process using self made polyferric metasilicate. 砷化鎵晶片生產(chǎn)過(guò)程中 ,產(chǎn)生大量廢水 ,其中主要污染物是懸浮狀態(tài)的砷化鎵微粒。
- Photonic crystals are a new kind of materials with photonic band gap. 光子晶體是一種具有光子帶隙的新型功能材料。
- New base materials for integrated circuits, such as composite layers of gallium arsenide and gallium aluminum arsenide, may contribute to faster chips. 為像含有種種要素數層的金家砷化物和金家鋁砷化物這樣的集成電路的新基礎材料,可能成為較快速的薯條因素。
- A novel photonic band gap (PBG) structure is presented in this paper. 提出一種新型微帶光子帶隙結構。
- Single crystal gallium arsenide wafers are for applications that are extensively used in the opto-electronics and microelectronics industries. 公司注冊地址在北京經(jīng)濟技術(shù)開(kāi)發(fā)區，總占地面積24000平方米，注冊資金1500萬(wàn)美元，總投資金額4500萬(wàn)美元。
- Synthetic crystals of elements such as silicon, gallium arsenide, and germanium are used in transistors, rectifiers, and integrated circuits. 由矽、鎵砷化物和鍺合成的晶體用于電晶體、整流器和積體電路。
- Coffa's group has demonstrated light-emitting diodes (LEDs) that operate at room temperature with efficiencies as high as those of gallium arsenide devices. 寇法的研究團隊已展示可在室溫下運作的發(fā)光二極體（LED），效率和砷化鎵裝置不相上下。
- The upper bands (or buckets) in good lasing materials such as gallium arsenide are narrow and have steep sides, so they tend to hold relatively few electrons. 在砷化鎵等發(fā)光效率較高的雷射材料中，上層能帶（或桶子）相當窄，兩側曲線(xiàn)很陡，因此可容納的電子數目比較少；
- Gallium oxide was prepared from gallium arsenide scraps through a series of steps such as leaching,purifying,neutralization,precipitation and calcination. 通過(guò)浸取、除雜、中和沉淀、煅燒等工藝對砷化鎵廢渣制備氧化鎵進(jìn)行了試驗研究,并確定了較佳的工藝條件。
- Such devices, which would be much cheaper than conventional LEDs composed of gallium nitride or gallium arsenide, are currently held back by their low rates of light emission. 這類(lèi)裝置的價(jià)格會(huì )比氮化鎵或砷化鎵制成的傳統LED便宜許多，但是目前的發(fā)展仍然受限于發(fā)光效率過(guò)低。
- The optical band gap energy of CuInS2 thin films, deduced from the optical transmission spectrum, was 1. 50 eV. 結果表明;所制得的樣品為四方結構的多晶CuInS_2薄膜;Cu/In比接近化學(xué)計量比;其光學(xué)禁帶寬度為1.;50eV。
- The photocathode is coated with sensitive gallium arsenide, which allows for a more efficient conversion of light to electrical energy at extremely low levels of light. 其表面鍍上一層很敏感的砷化鎵光電陰極涂層，,在極弱光線(xiàn)下它能使光更有效的轉化為電能。
