Although the energy bandgap can be reduced in the dilute InGaAsN channel, the InGaAsN material must be growth in low temperatures. 雖然在砷化銦鎵的材料中加入微量氮元素可以使其能隙下降，然而四元氮砷化銦鎵材料卻必須在低溫下成長(cháng)。
His currente research will focus more onw ide gap semiconductor MOCVD growth, inter disciplinary materials investigation and nano-scalehdevice Network evelopment. 現在的研究課題主要是著(zhù)重在寬能隙半導體金屬氧化物化學(xué)氣相磊晶的成長(cháng)，多學(xué)科材料研究及奈米器件研發(fā)。
The influence of quantum interferences on the narrow spontaneous line decreases as the forbidden gap and the detuning of the upper levels from the edges of the gap increase. 量子相干對自發(fā)輻射線(xiàn)的影響隨著(zhù)禁帶寬度和上能級與帶隙邊緣距離增加而變小。
The influence of quantum interferences on the narrow spontaneous line decreases as the forbidden gap and the detuning of the upper levels from the edges of the gap increase. 量子相干對自發(fā)輻射線(xiàn)的影響隨著(zhù)禁帶寬度和上能級與帶隙邊緣距離增加而變小。
