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- A memory cell array includes a plurality of memory cells each of which has a control gate and a floating gate. 存儲單元陣列包括多個(gè)存儲單元，每一存儲單元具有控制柵和浮動(dòng)柵。
- memory cell array 存儲單元陣列
- Therefore, as an associative memory the PLN network is an idealone. （2）每個(gè)穩定狀態(tài)具有最大的吸引域；
- A transistor memory cell can be made with any number of terminals. 晶體管存貯單元端點(diǎn)的數量是不受限制的。
- Fuzzy inference network (FIN) and fuzzy associative memory network (FAM) are two most important FNN models. 模糊推理網(wǎng)絡(luò )(FIN)和模糊聯(lián)想記憶網(wǎng)絡(luò )(FAM)是兩種最重要的FNN模型。
- Characterize standard logic cells and memory cells. 提取標準邏輯單元和存儲電路的參數。
- The CAM includes a CAM cell array, a priority encoder, and a shift register unit. 該CAM包含CAM存儲單元陣列、優(yōu)先編碼器、以及移位寄存器單元。
- The memory cells may be multistate memory cells. 該存儲單元可以是多狀態(tài)存儲單元。
- Thus arrays support what is sometimes referred to as content-addressable memory or associative memory. 因此,數組支持所謂的按內容尋址的存儲器或關(guān)聯(lián)存儲器。
- Hardware implementation of the two-level decoupled Hamming associative memory is based on FPGA. 整個(gè)二層非耦合漢明聯(lián)想存儲器的硬件實(shí)現是基于FPGA的設計。
- The two-level decoupled Hamming associative memory is a new kind of associative memory. 摘要二層非耦合漢明聯(lián)想存儲器是一種新型的聯(lián)想存儲器。
- We study a model of associative memory based on a neural network with small-world structure. 本文研究了基于小世界結構的神經(jīng)網(wǎng)絡(luò )中的聯(lián)想記憶模型。
- The priority encoder tests the CAM cell array to determine if the CAM cell array has errors by comparing search data with data stored in the CAM cell array. 優(yōu)先編碼器通過(guò)比較搜索數據與存儲在CAM存儲單元陣列中的數據來(lái)測試CAM存儲單元陣列、以確定CAM存儲單元陣列是否有錯誤。
- Experiments are also conducted and their results show that the associative memory performance of this newmodel is better th... 實(shí)驗結果表明，其聯(lián)想記憶能力優(yōu)于目前現有的聯(lián)想記憶網(wǎng)絡(luò )。
- Compared with item memory, more neural mechanisms are needed to fulfill associative memory, such as, prefrontal cortex and hippocampal. 與項目記憶相比，關(guān)聯(lián)記憶需要參與的大腦區域相對較多，包括前額區與海馬等；
- This problem can occur if 70 (binary 1000110) has been changed to 6 (binary 000110) by an unstable memory cell. 如果不穩定的內存單元已將70(二進(jìn)制為1000110)更改為6(二進(jìn)制為000110),則會(huì )發(fā)生此問(wèn)題。
- Selecting circuits for columns of an array of memory cells are used to hold read data or write data of the memory cells. 用于存儲單元的一個(gè)陣列的各列的選擇電路，用來(lái)保持該存儲單元的讀出或寫(xiě)入數據。
- The generation mechanism of stress induced leakage current( SILC) in flash memory cell is studied by experiments. 通過(guò)實(shí)驗研究了閃速存儲器存儲單元中應力誘生漏電流(ILC)產(chǎn)生機理.
- By adopting the general model of associative memory and the iterative solution of NN, the artillery optimal operational proposal is analyzed and prioritized. 根據神經(jīng)網(wǎng)絡(luò )中聯(lián)想記憶的一般模型和迭代解法對炮兵作戰方案進(jìn)行分析和排序，并可運用計算機進(jìn)行處理，為炮兵指揮員的決策行為提供依據。
- The result indicates that this algorithm is a more efficient means to skeculate trend in future, which achieve forecasting through evolutionary process and associative memory. 實(shí)踐表明，該方法能通過(guò)對股票價(jià)格演變歷程產(chǎn)生聯(lián)想，來(lái)實(shí)現預測，是一種更有意義的預測手段。
