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- Keywords molecular beam epitaxy;quantum dot;quantum well;spin relaxation;Gallium Arsenide;Aluminum Gallium Arsenide;inverse spin Hall effect; 關(guān)鍵詞分子束外延;量子點(diǎn);量子阱;自旋馳豫;砷化鎵;砷化鋁鎵;自旋霍爾逆效應;
- Diffused red, gallium arsenide phosphide red. 功能應用: Discrete LED indicator.
- New base materials for integrated circuits, such as composite layers of gallium arsenide and gallium aluminum arsenide, may contribute to faster chips. 為像含有種種要素數層的金家砷化物和金家鋁砷化物這樣的集成電路的新基礎材料,可能成為較快速的薯條因素。
- Common lasing media such as gallium arsenide, in comparison, feature emission efficiencies some 10,000 times larger. 相比之下，砷化鎵等常用雷射材料的發(fā)光效率則是矽的一萬(wàn)倍。
- This thesis extracts a small signal equivalent circuit model from a Gallium Arsenide MESFET device. 因此本論文研究在槽線(xiàn)架構下，不同饋入方式在頻率響應上的影響。
- To produce the electron beam, a laser will fire at a target made of gallium arsenide, knocking off billions of electrons with each pulse. 產(chǎn)生電子射束的方法，是利用一道雷射轟擊用砷化鎵制成的標靶，每個(gè)脈沖會(huì )打出幾十億個(gè)電子。
- The recombination-type semi-insulating gallium arsenide material of high resistivity is prepared by B2O3 liquid encapsulated Czochralski method (LEC). 采用B_2O_3液封直拉法制備出高電阻率的復合型半絕緣砷化鎵。
- In this paper, polyferric silicate sulfate (PFSS) was prepared and arsenic-containing wastewater from gallium arsenide plant was flocculated by it. 用自制的無(wú)機高分子聚合硅酸鐵(PFSS),對砷化鎵生產(chǎn)中的含砷廢水進(jìn)行了混凝處理。
- Arsenic containing wastewater from gallium arsenide production was treated by coagulation process using self made polyferric metasilicate. 砷化鎵晶片生產(chǎn)過(guò)程中 ,產(chǎn)生大量廢水 ,其中主要污染物是懸浮狀態(tài)的砷化鎵微粒。
- Single crystal gallium arsenide wafers are for applications that are extensively used in the opto-electronics and microelectronics industries. 公司注冊地址在北京經(jīng)濟技術(shù)開(kāi)發(fā)區，總占地面積24000平方米，注冊資金1500萬(wàn)美元，總投資金額4500萬(wàn)美元。
- Synthetic crystals of elements such as silicon, gallium arsenide, and germanium are used in transistors, rectifiers, and integrated circuits. 由矽、鎵砷化物和鍺合成的晶體用于電晶體、整流器和積體電路。
- Coffa's group has demonstrated light-emitting diodes (LEDs) that operate at room temperature with efficiencies as high as those of gallium arsenide devices. 寇法的研究團隊已展示可在室溫下運作的發(fā)光二極體（LED），效率和砷化鎵裝置不相上下。
- The upper bands (or buckets) in good lasing materials such as gallium arsenide are narrow and have steep sides, so they tend to hold relatively few electrons. 在砷化鎵等發(fā)光效率較高的雷射材料中，上層能帶（或桶子）相當窄，兩側曲線(xiàn)很陡，因此可容納的電子數目比較少；
- Gallium oxide was prepared from gallium arsenide scraps through a series of steps such as leaching,purifying,neutralization,precipitation and calcination. 通過(guò)浸取、除雜、中和沉淀、煅燒等工藝對砷化鎵廢渣制備氧化鎵進(jìn)行了試驗研究,并確定了較佳的工藝條件。
- Such devices, which would be much cheaper than conventional LEDs composed of gallium nitride or gallium arsenide, are currently held back by their low rates of light emission. 這類(lèi)裝置的價(jià)格會(huì )比氮化鎵或砷化鎵制成的傳統LED便宜許多，但是目前的發(fā)展仍然受限于發(fā)光效率過(guò)低。
- The photocathode is coated with sensitive gallium arsenide, which allows for a more efficient conversion of light to electrical energy at extremely low levels of light. 其表面鍍上一層很敏感的砷化鎵光電陰極涂層，,在極弱光線(xiàn)下它能使光更有效的轉化為電能。
- With these MESFET devices comes the need to model them.This thesis extracts a small signal equivalent circuit model from a Gallium Arsenide MESFET device. 要如何去除不必要的寄生效應進(jìn)而獲得本質(zhì)元件的小訊號特性參數是許多研究工作者所努力的目標。
- Although photovoltaics made of advanced materials such as gallium arsenide can achieve nearly 30 percent efficiencies, the cost makes them suited only for use in space. 雖然使用如砷化鎵之類(lèi)先進(jìn)材料制成的光電池（photovoltaics），已能達到將近30%25的效率，但其造價(jià)之昂，使得它們只適用于太空中。
- Because gallium arsenide has a high emission rate (it amplifies light efficiently because its bands line up), its total photon emissions easily outpace its absorptions. 由于砷化鎵發(fā)光效率很高（因為能帶呈正對排列，所以可以很有效率地放大光），因此其光子發(fā)射總數很容易就可以超過(guò)其吸收總數。
- Used in bipolar chipmaking in place of the more expensive gallium arsenide process, SiGe allows for significant improvements in operating frequency, current, noise, and power capabilities. 在二極管芯片制造中用來(lái)代替功耗更高的砷化鎵,SiGe可以顯著(zhù)地改善操作頻率、電流、噪音和電源容量。
