With various reaction time, silicon film thickness and adhesion layer, we measured the resistivity, adhesion and grain size.Meanwhile, we fabricated the poly-silicon/Ta/SiO2/Si structure.

 
  • 其次我們以置換法沈積銅種子層,研究在不同置換時(shí)間、矽膜厚度及附著(zhù)層,其電阻率、附著(zhù)力、結晶晶相及晶粒大小。
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