With appropriate Ga content in CIG precursors, the atomic ratio of Cu/( In + Ga) can be close to 1:1; adjusting the Ga content in the precursor results in a control of Cu/(In + Ga)ratio of the CIGS films with uniformly distributed constituent elements.
英
美
- 結果表明,通過(guò)調節CIG前驅膜的Ga含量可制備得到 Cu/(In+Ga)原子比接近1,且Ca/(In+Ga)比例可調的成分分布均勻的CIGS薄膜。