Using these silicon films as the intrinsic layer,p-i-n solar cells were prepared on SnO2 substrates. The open circuit voltage(Voc) was 0.891V.

 
  • 以這部分材料作為太陽(yáng)電池的本征層;在SnO2襯底上制備了p-i-n型太陽(yáng)電池;電池的初始開(kāi)路電壓(Voc)達到了0.;891V。
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