Unfortunately, the quality of GaN layers grown on SiC is inferior to that grown on the commonly used sapphire substrate due to the relative poor surface properties of SiC.

 
  • 不幸的,由于碳化矽差表面性質(zhì)使得氮化鎵在碳化矽成長(cháng)品質(zhì)無(wú)法與在一般常用藍寶石基板相比。
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