Ultra-thin Si 3N 4/SiO 2(N/O) stack gate dielectric with EOT of 2.1nm is fabricated successfully,and its characteristics are investigated.

　
英 美
  • 成功制備了EOT(equivalentoxidethickness)為 2 1nm的Si3 N4/SiO2 (N/O)stack柵介質(zhì) ；并對其性質(zhì)進(jìn)行了研究 .
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