Titanium nitride films were grown by unbalanced magnetron sputtering at different N2 and Ar partial pressure ratios on Ti6Al4V alloy substrate.
英
美
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采用非平衡磁控濺射技術(shù),在鈦合金(Ti6Al4V)表面沉積氮化鈦薄膜。 通過(guò)改變氮氣和氬氣分壓比(PN/PAr)和基體偏壓,制備出不同結構、性能的氮化鈦薄膜。
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