Titanium nitride films were deposited on silicon(100) substrate at room temperature with various substrate bias voltages (corresponding to various impact energy) by energetic cluster impact (ECI).

 
  • 在室溫下,以硅(100)為襯底,在不同的襯底偏壓(即團簇不同碰撞能量)的條件下,用荷能團簇碰撞沉積方法制備了TiN薄膜。
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