Thin SiN layers and nitride-based multiquantum well( MQW) light emitting diode( LED) structures with conventional single GaN buffer and GaN/ SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition( MOCVD).
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- 摘要以有機金屬化學(xué)氣象沉積在藍寶石基板上成長(cháng)由單一氮化鎵成核層與氮化鎵/化硅雙緩沖層所形成的兩種不同氮基礎的多層量子井發(fā)光二極體結構。