These results indicate that bismuth, tellurium and selenium could be co-deposited to form Bi2Te3-ySey semiconductor compound by electrochemical deposition technique in the solution containing Bi3+, HTeO2+and Se4+.
英
美
- 結果表明,在含有Bi3+、HTeO2+和Se4+的電沉積溶液中,采用電化學(xué)沉積的方法,可實(shí)現鉍、碲、硒三元共沉積,生成Bi2Te3-ySey半導體化合物;
