Therefore the existing measurement te chniques and interface parameter extraction methods for the MOS capac itor can be directly applied to an SIS capacitor. SIMOX SOI wafers produced by ion implant processes we re used in this experiment.
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美
- 傳統的MOS電容結構測試電學(xué)特性應用到SOI圓片是有其局限性的,在本實(shí)驗中直接利用SOI圓片的SIS(Silicon-Insulator-Silicon)結構,將SOI圓片的無(wú)損電學(xué)表征方法應用到實(shí)際的表征當中去。
