Theoretical research and computer simulation show that the new IIL can obtain higher resolution and better resist patterns as well as decrease position error of patterns out of focusing.

 
  • 理論和計算模擬表明,該方法可以提高圖形對比度和分辨力,并減小因調焦誤差引起的圖形橫向位移誤差,有利于改善抗蝕劑圖形質(zhì)量。
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