The usual method to induce process strain is to glow a highly strained nitride cap layer beneath the NMOS.This way, there is tensile strain induced in the channel.

 
  • 現今常用的制程應變?yōu)?,于N型金氧半場(chǎng)效體上方覆誘層強硬力氮化物,藉此對通道產(chǎn)生張應變。
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