The thicknesses of the layers between the active region and the ridge waveguide are optimized by taking into account the injected carrier distribution and local material gain in the SLD cross section.

 
  • 考慮了注入載流子橫向分布的不均勻,較準確地計算了模式增益。結果表明,通過(guò)對殘留層和上光限制層厚度的優(yōu)化,可以有效提高SLD與單模光纖的耦合功率。
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