The silicon carbide epitaxial layer may have a thickness and a doping level so as to provide a charge in the silicon carbide epitaxial region based on the surface doping of the blocking layer.

 
  • 碳化硅外延層可以有一厚度和一摻雜水平使得在阻擋層表面摻雜的基礎上提供碳化硅外延區內的電荷。
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