The reduction of ceria induced by argon ion beam used for etching and its change as a function of etching time in XPS depth profilingand the relevant mechanism were discussed.

　
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  • 本文簡(jiǎn)明報道了氬離子刻蝕XPS深度剖析中氬離子誘發(fā)的二氧化鈰還原反應現象及其隨離子刻蝕時(shí)間的變化規律,并對其機理進(jìn)行了討論分析。
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