The profiling of the compositions and impurities have been measured in SiC:H film, organic film, SiN:H film, SiO2 target, LaBaCuO super-conductor film, GaN target, CHN/Si target etc with the technique mentioned above.

 
  • 應用以上技術(shù)測量了SiC:H薄膜、有機膜、SiN:H薄膜、SiO_2靶、LaBaCuO超導膜、GaN靶CHN/Si靶等多種樣品的成分及雜質(zhì)的深度分布。
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