The other has two metal-insulator-semiconductor (MS) contacts with lower leakage current (less than 4 pA ,300V) and better energy resolution (about 10% FWHM for241Am 59.5KeV line) and poor working stability.

 
  • 前者的漏電流較大,能量分辨率較差,但工作穩定性相對較好,后者的漏電流能降低到4pA(300V)以下,能量分辨率達到10%25(FWHM)左右,但工作穩定性較差;
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