The negative-bias temperature instability (NBTI) characteristics of HfN/HfO_2 gated p-MOSFET with equivalent oxide thickness (EOT) of 1.3nm and low pre-existing traps are studied.
英
美
- 研究了HfN/HfO_2高K柵結構p型金屬-氧化物-半導體(MOS)晶體管(MOSFET)中；負偏置-溫度應力引起的閾值電壓不穩定性(NBTI)特征.；HfN/HfO_2高K柵結構的等效氧化層厚度(EOT)為1·3nm；內含原生缺陷密度較低
