The lattice strain of MBE grown CdTe(211)B epilayers on 76mm Si(211) and 76mm GaAs(211)B substrates was studied by reciprocal space maps of high-resolution multi-crystal multi-reflection X-ray diffractmetry(HRMCMRXD).
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- 本文利用高分辨率多重晶多重反射X射線(xiàn)衍射技術(shù)對分子束外延CdTe(211)B/Si(211)與CdTe(211)B/GaAs(211)B材料的CdTe外延薄膜進(jìn)行了倒易點(diǎn)二維掃描,并通過(guò)獲得的倒易點(diǎn)二維圖,對CdTe緩沖層的應力和應變狀況進(jìn)行了分析。
