The interface formation process for In deposited on noncleaved GaAs (111) plane has been studied by means of photoemission speetroscopy combined with LEED pattern analysis.

 
  • 用光電子能譜結合LEED圖樣分析的方法研究了In在非解理的GaAs(111)面上的界面形成過(guò)程。
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