The growth method employed in this study is chemical vapor deposition from a mixture of ferrocene and xylene,by which a strong selective growth from SiO_2 to Si was observed.

 
  • 利用以二茂鐵和二甲苯作為反應前驅體的化學(xué)氣相沉積法在該基底上實(shí)現了碳管在二氧化硅與硅之間的選擇性生長(cháng),并在不同的沉積溫度條件下,可以分別獲得球狀和束狀碳管產(chǎn)物。
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目錄 附錄 查詞歷史
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