The fabrication and reliability of ohmic contact on n type GaAs and fai lure analysis of GaAs MESFET based on ohmic contact degradation are reported in this paper.

 
  • 報道了n型GaAs上歐姆接觸的制備及其可靠性,以及基于歐姆接觸退化的GaAsMES-FET的失效分析。
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