The fabricated devices show the performance compared with that of a fully-depleted SOI MOS FET, even though the process needs to be improved further.

 
  • 盡管制備工藝尚須進(jìn)一步優(yōu)化,但所制成的雙柵晶體管已呈現了可與常規全耗盡SOI MOS FET相比擬的器件特性。
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