The etch pit density of SI-GaAs crystals can reach the order of 10~2/cm~2.There is no microprecipitate of indium in the crystals.

 
  • 晶體中位錯腐蝕坑密度達到約10~2/cm~2數量.;晶體中沒(méi)有觀(guān)察到銦的微沉淀物
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