The effects of different parameters which include the flow ratio of SiH4, the flow ratio of H2 and substrate temperature were investigated by means of RHEED, TEM and AFM.

 
  • 利用反射高能電子衍射(RHEED)、透射電子顯徽鏡(TEM)和原子力顯微鏡(AFM)研究了 SiH4流量、H2流量和襯底溫度等工藝參數的改變對薄膜晶化的影響。
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