The drift level of flat band voltage and threshold voltage were measured by SOFRON-1505C model X-ray device after X-ray radiating three kind MOS capacitors CD130, CE28, CG28. The effect of X-ray irradiation on MOS capacitors was analyzed.
英
美
- 作者利用SOFRON-1505C型X光機；對3種MOS電容CD130；CE28；CG28受X射線(xiàn)后的平帶電壓和閥電壓的飄移量進(jìn)行測試和分析；從而分析X射線(xiàn)輻射對MOS電容的影響.
