The dislocation free crystal growth based on heavily B doped seeds without Dash necking was introduced. The mechanical properties, the oxygen and the void defects of heavily B doped Czochralski silicon were also discussed.
英
美
- 主要內容包括重摻B硅單晶的基本性質(zhì) ,利用重摻B籽晶進(jìn)行無(wú)縮頸硅單晶生長(cháng)技術(shù) ,重摻B硅單晶的機械性能 ,重摻B硅單晶中的氧和氧沉淀 ,以及B的大量摻雜與大直徑直拉硅單晶中空洞型 (Void)原生缺陷的控制關(guān)系。