The devices were passivated by the thin film of Photo-CVD silicon nitride, we found that the reliability of the devices was to be raised.

 
  • 采用光化學(xué)氣相淀積(光CVD)氮化硅薄膜進(jìn)行器件的表面鈍化;使整個(gè)器件提高了可靠性.
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