The calculated results show that the 420 nm absorption band will be eliminated and the property of the light induced refraction will be enhanced under the condition of heavily doped K:PbWO_4.

 
  • 計算結果表明;高濃度摻K離子將消除420nm吸收帶;改善PbWO4晶體的抗輻照損傷性能.
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